SG10B [BL Galaxy Electrical]

FAST RECOVERY RECTIFIERS; 快恢复二极管
SG10B
型号: SG10B
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

FAST RECOVERY RECTIFIERS
快恢复二极管

二极管 快恢复二极管 快速恢复二极管
文件: 总2页 (文件大小:57K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GALAXY ELECTRICAL  
SG10A---SG10M  
BL  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 1.0 A  
FAST RECOVERY RECTIFIERS  
FEATURES  
Low cost  
DO - 15  
Diffused junction  
Low leakage  
Low forward voltage drop  
High current capability  
Easily cleaned with Freon Alcohol,Isopropanol  
and similar solvents  
MECHANICAL DATA  
Case: JEDEC DO-15,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-202,Method 208  
Polarity: Color band denotes cathode  
Weight: 0.014 ounces,0.39 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
SG  
10A  
SG  
10B  
SG  
10D  
SG  
10G  
SG  
10J  
SG  
10K  
SG  
10M  
UNITS  
50  
35  
50  
100  
70  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
VRRM  
VRMS  
VDC  
100  
1000  
Maximum DC blocking voltage  
Maximum average forw ard rectified current  
1.0  
A
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
10ms single half-sine-w ave  
30.0  
1.3  
A
IFSM  
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
@ 1.0A  
V
A
VF  
IR  
Maximumreverse current  
@TA=25  
5.0  
at rated DC blocking voltage @TA=100  
Maximum reverse recovery time (Note1)  
100.0  
150  
250  
500  
ns  
trr  
Typical junction capacitance  
Typical thermal resistance  
(Note2)  
(Note3)  
12  
55  
pF  
CJ  
Rθ  
/ W  
JA  
Operating junction temperature range  
Storage temperature range  
- 55 ---- +150  
- 55 ---- +150  
TJ  
TSTG  
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
2. Measured at 1.0MHz and applied rev erse voltage of 4.0V DC.  
3. Thermal resistance from junction to ambient.  
www.galaxycn.com  
Document Number 0261067  
BLGALAXY ELECTRICAL  
1.  
RATINGS AND CHARACTERISTIC CURVES  
SG10A---SG10M  
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
trr  
50  
N.1.  
10  
N.1.  
+0.5A  
D.U.T.  
(
- )  
0
(+)  
PULSE  
50VDC  
(APPROX)  
(-)  
GENERATOR  
(NOTE2)  
-0.25A  
OSCILLOSCOPE  
(NOTE 1)  
1
(
+ )  
N.1.  
-1.0A  
1cm  
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF  
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O  
SETTIMEBASEFOR50/100 ns /cm  
FIG.2 --FORWARD DERATING CURVE  
FIG.3 --PEAK FORWARD SURGE CURRENT  
50  
40  
30  
1.2  
1.0  
0.8  
Single Phase  
Half Wave 60H  
Resistive or  
Inductive Load  
Z
TJ=25  
8.3ms Single Half  
Sine-Wave  
0.6  
0.4  
20  
10  
0.2  
0
0
1
10  
100  
0
20  
40  
60  
80  
100  
120 140 160 180  
200  
AMBIENTTEMPERATURE,  
NUMBEROF CYCLES AT60 Hz  
FIG.4--TYPICAL FORWARD CHARACTERISTIC  
FIG.5-- TYPICAL JUNCTION CAPACITANCE  
100  
10  
100  
20  
TJ=25  
Pulse Width=300µS  
4
16  
14  
2
1.0  
12  
0.4  
0.2  
10  
6
TJ=25  
f=1MHz  
4
0.1  
0.06  
2
0.02  
0.01  
1
0.1  
0.2  
0.4  
1
2
4
10  
20  
40 100  
0.6 0.8 1.0  
1.2  
1.4 1.6 1.8  
2.0  
INSTANTANEOUS FORWARDVOLTAGE,VOLTS  
REVERSE VOLTAGE,VOLTS  
www.galaxycn.com  
2.  
Document Number 0261067  
BLGALAXY ELECTRICAL  

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